1. Solvothermal synthesis
1. Tse talakaro-karolelano ea lintho tse bonahalang"
Zinc phofo le selenium phofo li tsoakoa ka 1: 1 molar karo-karolelano, 'me metsi deionized kapa ethylene glycol e eketsoa e le solvent medium 35..
2 .Maemo a ho itšoara
o Mocheso oa ho itšoara: 180-220 ° C
o Nako ea ho arabela: lihora tse 12-24
o Khatello: Boloka khatello e itlhahisang ka har'a ketlele e koetsoeng ea karabelo
Motsoako o tobileng oa zinki le selenium o nolofalloa ke ho futhumatsa ho hlahisa likristale tsa nanoscale zinc selenide 35.
3.Mokhoa oa ka mor'a phekolo"
Kamora karabelo, e ne e entsoe ka centrifuged, e hlatsuoa ka dilute ammonia (80 °C), methanol, le vacuum e omisitsoeng (120 ° C, P₂O₅).btainphofo > 99.9% bohloeki 13.
2. Mokhoa oa ho beha mouoane oa lik'hemik'hale
1.Phekolo ea thepa e tala
o Bohloeki ba lisebelisoa tse tala tsa zinki ke ≥ 99.99% mme e behiloe ka har'a crucible ea graphite
o Khase ea hydrogen selenide e tsamaisoa ka argon gas carry6.
2 .Taolo ea mocheso
o Sebaka sa mouoane oa zinki: 850-900°C
o Sebaka sa ho beha: 450-500°C
Ho beha mouoane oa zinki ka tatellano le hydrogen selenide ka tekanyo ea mocheso 6.
3 .Mekhahlelo ea khase
o Phallo ea Argon: 5-10 L / min
o Khatello e sa fellang ea hydrogen selenide:0.1-0.3 atm
Litefiso tsa deposition li ka fihla ho 0.5-1.2 mm / h, e leng se etsang hore ho thehoe 60-100 mm e teteaneng ea polycrystalline zinc selenide 6..
3. Mokhahlelo o tiileng oa ho kopanya mokhoa o tobileng
1. Tse talaho tshwara thepa"
Tharollo ea zinc chloride e ile ea etsoa ka tharollo ea oxalic acid ho etsa precipitate ea zinc oxalate, e neng e omisitsoe le ho siloa ebe e kopantsoe le phofo ea selenium ka karolelano ea 1: 1.05 molar 4.
2 .Thermal reaction parameters
o Vacuum tube sebōpi mocheso: 600-650°C
o Boloka nako e futhumetseng: lihora tse 4-6
Zinc selenide phofo e nang le karoloana ea boholo ba 2-10 μm e hlahisoa ke karabelo e tiileng ea phallo ea karolo 4..
Papiso ea mekhoa ea bohlokoa
| mokhoa | Boemo ba lihlahisoa | Boholo ba likaroloana/botenya | Crystallinity | Libaka tsa kopo |
| Mokhoa oa ho futhumatsa mocheso 35 | Nanoballs/rods | 20-100 nm | Cubic sphalerite | Lisebelisoa tsa Optoelectronic |
| Ho beha mouoane 6 | Li-polycrystalline blocks | 60-100 limilimithara | Sebopeho sa hexagonal | Infrared optics |
| Mokhoa o tiileng oa mohato oa 4 | Li-powders tsa boholo ba micron | 2-10 μm | Karolo ea cubic | Li-precursors tsa thepa ea infrared |
Lintlha tsa bohlokoa tsa taolo e khethehileng ea ts'ebetso: mokhoa oa solvothermal o hloka ho kenyelletsa li-surfactants tse kang oleic acid ho laola morphology 5, 'me deposition ea mouoane e hloka hore substrate roughness e be
1. Ho beha mouoane 'meleng (PVD).
1 .Mokhoa oa theknoloji
o Zinc selenide e tala e etsoa mouoane sebakeng sa vacuum 'me e behoa holim'a substrate ho sebelisoa theknoloji ea sputtering kapa thermal evaporation12.
Mehloli ea mouoane ea zinki le selenium e futhumatsoa ho likhahla tse fapaneng tsa mocheso (sebaka sa zinki e mouoane: 800-850 °C, sebaka sa selenium sa mouoane: 450-500 °C), 'me karolelano ea stoichiometric e laoloa ka ho laola sekhahla sa mouoane."12.
2 .Taolo ea parameter
o Vacuum: ≤1×10⁻³ Pa
o Basal mocheso: 200–400°C
o Sekhahla sa deposition:0.2–1.0 nm/s
Lifilimi tsa zinc selenide tse nang le botenya ba 50-500 nm li ka lokisetsoa ho sebelisoa ho infrared optics 25..
2. Mokhoa oa ho sila ka mochini
1.Ho sebetsana le thepa e tala
o Zinc phofo (bohloeki≥99.9%) e kopantsoe le phofo ea selenium ka tekanyo ea 1: 1 molar ebe e kenngoa ka har'a nkho ea tšepe e sa hloekang ea tšepe ea 23..
2 .Mekhoa ea ts'ebetso
o Nako ea ho sila: lihora tse 10-20
Lebelo: 300-500 rpm
o Pellet ratio: 10: 1 (zirconia grinding balls).
Zinc selenide nanoparticles tse nang le boholo ba karolo ea 50-200 nm li hlahisitsoe ke karabelo ea mochini oa alloying, ka bohloeki ba> 99% 23..
3. Mocheso o tobetsa mokhoa oa sintering
1 .Tokisetso ea pele
o Zinc selenide nanopowder (karolo ea boholo <100 nm) e entsoeng ka mokhoa oa solvothermal e le lisebelisoa tse tala 4.
2 .Sintering parameters
o Mocheso: 800–1000°C
o Khatello: 30–50 MPa
o Ho futhumala: lihora tse 2-4
Sehlahisoa se na le letsoalo la > 98% 'me se ka sebetsoa ka likarolo tse kholo tsa sebopeho se seholo joalo ka lifensetere tsa infrared kapa lenses 45..
4. Epitaxy ea khanya ea molek'hule (MBE).
1.Tikoloho ea vacuum e phahameng haholo
o Vacuum: ≤1×10⁻⁷ Pa
o Mabala a molek'hule a zinki le selenium a laola ka nepo ho phalla ha mohloli oa elektrone beam evaporation6.
2.Mekhahlelo ea kholo
o Mocheso oa motheo: 300-500 ° C (GaAs kapa li-sapphire substrates li sebelisoa hangata).
o Sekhahla sa kholo:0.1–0.5 nm/s
Lifilimi tse tšesaane tsa single-crystal zinc selenide li ka lokisoa ka bongata ba 0.1-5 μm bakeng sa lisebelisoa tse phahameng tsa optoelectronic56.
Nako ea poso: Apr-23-2025